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device tested operating temperature range package semiconductor technical data single igbt high current gate driver ordering information MC33154d MC33154p t a = 40 to +85 c plastic so8 plastic dip8 d suffix plastic package case 751 (so8) 8 1 18 7 6 5 2 3 4 (top view) current sense input kelvin gnd v ee input fault blanking/ desaturation input gate drive output pin connections order this document by MC33154/d p suffix plastic package case 626 fault output v cc 8 1 t a = 40 to +85 c 1 motorola analog ic device data

the MC33154 is specifically designed as an igbt driver for high powered applications including ac induction motor control, brushless dc motor control, and uninterruptable power supplies. this device also offers a cost effective solution for driving power mosfets and bipolar transistors. device protections include the choice of desaturation or overcurrent sensing and an undervoltage lockout to provide assurance of proper gate drive voltage. these devices are available in dualinline and surface mount packages and include the following features: ? high current output stage: 4.0 a source 2.0 a sink ? protection circuits for both conventional and sense igbt's ? current source for blanking timing ? protection against overcurrent and short circuit ? undervoltage lockout optimized for igbt's ? negative gate drive capability simplified block diagram short circuit latch overcurrent latch fault output s q r current sense input kelvin gnd fault blanking/ desaturation input gate drive output short circuit comparator overcurrent comparator desat./blank. comparator under voltage lockout input v ee v cc v cc v cc v ee v ee v cc v ee v cc v ee v cc v ee v cc s q r v cc 7 4 5 8 2 1 130 mv 65 mv 1.0 ma 6.5 v output stage 12 v/ 11 v v cc 6 v ee 3 v ee ? motorola, inc. 1997 rev 1 this document contains information on a new product. specifications and information herein are subject to change without notice.
MC33154 2 motorola analog ic device data maximum ratings rating symbol value unit power supply voltage v v cc to v ee ; v ee kgnd v cc v cc v ee 20 kelvin ground to v ee (note 1) kgnd v ee 20 input v in v ee 0.3 to v cc v current sense input v cs 0.3 to v cc v fault blanking/desaturation input v bd 0.3 to v cc v gate drive output i o a source current 4.0 sink current 2.0 diode clamp current 1.0 fault output i fo ma source current 25 sink current 10 power dissipation and thermal characteristics d suffix so8 package, case 751 maximum power dissipation @ t a = 50 c p d 0.56 w thermal resistance, junctiontoair r q ja 180 c/w p suffix dip8 package, case 626 maximum power dissipation @ t a = 50 c p d 1.0 w thermal resistance, junctiontoair r q ja 100 c/w operating junction temperature t j 150 c operating ambient temperature t a 40 to +85 c storage temperature range t stg 65 to +150 c notes: 1. kelvin ground must always be between v ee and v cc . 2. esd data available upon request. electrical characteristics (v cc = 20 v, v ee = 0 v, kelvin gnd connected to v ee . for typical values t a = 25 c, for min/max values t a is the operating ambient temperature range that applies [note 1] unless otherwise noted.) characteristic symbol min typ max unit input input threshold voltage v high state (logic 1) @ t a = 25 c v ih 9.0 10.5 high state (logic 1) @ t a = 40 to +85 c 11.6 low state (logic 0) v il 4.5 7.0 input current e high state (v ih = 10.5 v) i ih 100 500 m a input current e low state (v il = 4.5 v) i il 50 100 gate drive output output voltage v low state (i sink = 1.0 a) v ol 2.0 2.5 high state (i source = 2.0 a) v oh 17 18 output pulldown resistor r pd 100 200 k w fault output output voltage v low state (i sink = 5.0 ma) v fl 0.2 1.0 high state (i source = 20 ma) v fh 17 18.3 switching characteristics propagation delay (50% input to 50% output c l = 15 nf) ns logic input to drive output rise t plh (in/out) 200 300 logic input to drive output fall t phl (in/out) 120 300 drive output rise time (10% to 90%) c l = 15 nf t r 80 200 ns drive output fall time (90% to 10%) c l = 15 nf t f 80 200 ns propagation delay m s current sense input to drive output t p(oc) 0.4 1.0 note: 1. low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible. t low = 40 c for MC33154 t high = +85 c for MC33154
MC33154 3 motorola analog ic device data electrical characteristics (continued) (v cc = 20 v, v ee = 0 v, kelvin gnd connected to v ee . for typical values t a = 25 c, for min/max values t a is the operating ambient temperature range that applies [note 1] unless otherwise noted.) characteristic unit max typ min symbol switching characteristics fault blanking/desaturation input to drive output t p(flt) 0.4 1.0 uvlo startup voltage v cc start 11.3 12 12.6 v disable voltage v cc dis 10.4 11 11.7 v comparators over current trip voltage (v pin8 > 7.0 v) v soc 50 65 80 mv short current trip voltage (v pin8 > 7.0 v) v ssc 100 130 160 mv desaturation threshold (v pin1 > 100 mv) v th(flt) 6.0 6.5 7.0 v sense input current (v si = 0 v) i si 1.4 10 a fault blanking/desaturation input current source (v pin8 = 0 v, v pin4 10.5 v) i chg 0.8 1.0 1.2 ma discharge current (v pin8 = 15 v, v pin4 = 0 v) i dschg 0.8 2.5 ma total device power supply current i cc ma standby (v pin 4 = 0 v, output open) 9.0 14 operating (c l = 15 nf, f in = 20 khz) 15 25 note: 1. low duty cycle pulse techniques are used during test to maintain the junction temperature as close to ambient as possible. t low = 40 c for MC33154 t high = +85 c for MC33154 4.0 20 0 200 v o , output voltage (v) v in , input voltage (v) i in , input current ( a) figure 1. input current versus logic input voltage v in , input voltage (v) figure 2. output voltage versus input voltage t a = 25 c v cc = 20 v t a = 25 c v cc = 20 v 40 20 0 2.0 4.0 6.0 8.0 10 12 14 20 14 12 10 8.0 6.0 4.0 2.0 0 5.0 6.0 7.0 11 12 16 18 80 60 120 100 160 140 180 8.0 9.0 10 16 18
MC33154 4 motorola analog ic device data v oh , drive output high state voltage (v) v oh , drive output high state voltage (v) 0 20 0 2.0 60 12 60 19.2 60 2.5 14 10 i o , output current (a) t a = 25 c v cc = 20 v i sink , output sink current (a) t a , ambient temperature ( c) t a , ambient temperature ( c) v ol , output low state voltage (v) t a , ambient temperature ( c) figure 3. input threshold voltage versus supply voltage v cc , supply voltage (v) figure 4. input thresholds versus temperature figure 5. drive output low state voltage versus temperature figure 6. drive output low state voltage versus sink current figure 7. drive output high state voltage versus temperature figure 8. output saturation high versus output current t a = 25 c , v il , input threshold voltage (v) v ih , v ih , input threshold voltage (v) v il v ol , output low state voltage (v) 9.5 8.0 7.5 7.0 6.5 6.0 15 16 17 18 19 20 9.0 8.0 7.0 6.0 5.0 4.0 40 20 0 20 40 60 80 140 2.0 1.5 1.0 0.5 40 20 0 20 40 60 80 100 120 140 0 1.6 1.2 0.8 0 0.2 0.4 0.6 0.8 1.0 40 20 0 20 40 60 80 100 120 140 18.8 18.0 17.8 17.6 17.4 19 18 17 15 0.5 1.0 1.5 2.0 4.0 0.4 16 9.0 8.5 100 120 11 10 1.8 1.4 1.0 0.6 0.2 0.1 0.3 0.5 0.7 0.9 2.5 3.0 3.5 18.6 18.4 18.2 19.0 v ih v il t a = 25 c v cc = 20 v i source = 2.0 a i source = 1.0 a i source = 500 ma i sink = 250 ma i sink = 1.0 a i sink = 500 ma v ih v il v cc = 20 v v cc = 20 v v cc = 20 v
MC33154 5 motorola analog ic device data v o , drive output voltage (v) v ssc , short circuit threshold voltage (mv) 6.30 20 60 160 100 14 0 0.2 60 80 50 20 v bd , blanking/desaturation input (v) t a , ambient temperature ( c) v fo , fault output voltage (v) v s , current sense input voltage (mv) i si , sense input current ( a) v s , current sense input (v) v soc , overcurrent threshold voltage (mv) t a , ambient temperature ( c) v o , drive output voltage (v) figure 9. drive output voltage versus current sense input voltage v s , current sense input voltage (mv) figure 10. fault output voltage versus current sense input voltage figure 11. overcurrent threshold voltage versus temperature figure 12. short circuit threshold voltage versus temperature figure 13. sense input current versus sense voltage figure 14. output voltage versus blanking/desaturation voltage 14 12 10 8.0 6.0 4.0 2.0 0 55 60 65 70 75 80 12 10 8.0 6.0 4.0 2.0 0 105 110 115 120 125 140 75 65 60 55 50 40 20 0 20 40 60 80 100 120 140 140 130 120 110 100 40 20 0 140 0.4 1.2 2.0 4.0 6.0 8.0 10 12 14 16 6.35 6.50 6.60 6.70 10 0 16 18 130 135 20 16 18 20 40 60 80 100 120 150 6.40 6.45 6.65 6.55 2.0 4.0 6.0 8.0 12 14 16 18 1.0 0.8 0.6 0 0.2 70 t a = 25 c v cc = 20 v t a = 25 c v cc = 20 v t a = 25 c t a = 25 c v cc = 20 v
MC33154 6 motorola analog ic device data v th(flt) , fault blanking/desaturation threshold voltage (v) , discharge current (ma) i dschg , current source (ma) i chg , current source (ma) 0 6.0 12 1.20 12 6.520 0 1.5 60 0.80 60 7.0 v bd , fault blanking/desaturation input (v) v cc , supply voltage (v) v cc , supply voltage (v) i chg v bd , fault blanking/desaturation input (v) t a , ambient temperature ( c) v th(flt) , fault blanking/desaturation figure 15. desaturation threshold versus temperature t a , ambient temperature ( c) figure 16. blanking/desaturation threshold versus supply voltage figure 17. blanking current source versus temperature figure 18. blanking current versus supply voltage figure 19. blanking current versus blanking/desaturation voltage figure 20. blanking discharge current versus blanking/desaturation voltage 6.515 6.510 6.505 6.500 6.495 6.490 6.485 6.480 14 13 15 16 20 6.2 6.1 6.0 20 0 20 40 60 80 140 40 1.00 1.20 20 0 20 40 60 80 100 120 140 40 1.00 0.80 14 16 18 20 0 0.5 1.0 1.5 2.0 4.0 6.0 8.0 10 12 14 16 18 20 2.0 8.0 20 4.0 2.0 1.0 0 1.0 2.0 100 120 6.4 6.3 6.6 6.5 6.8 6.7 6.9 17 18 19 1.15 1.10 1.05 0.85 0.95 0.90 13 15 17 19 0.85 0.90 0.95 1.15 1.05 1.10 2.0 10 6.0 14 12 5.0 4.0 3.0 1.0 0.5 t a = 25 c v bd = 20 v t a = 25 c 18 16 t a = 25 c v cc = 20 v t a = 25 c v cc = 20 v threshold voltage (v) i chg , current source (ma)
MC33154 7 motorola analog ic device data 0 10 0 20.0 1.0 40 60 12.5 0 0.40 v cc , supply voltage (v) i fo , fault output source current (ma) i cc , supply current (ma) f in , input frequency (khz) v ccstart , startup voltage (v) t a , ambient temperature ( c) figure 21. fault output voltage low versus fault output current i fo , fault output source current (ma) figure 22. fault output voltage high versus fault output current figure 23. uvlo start threshold versus temperature figure 24. standby supply current versus supply voltage figure 25. supply current versus input frequency , low state output voltage (v) v ol i cc , supply current (ma) 7.0 3.0 2.0 1.0 5.0 10 15 20 0 0.30 0.25 0.10 0.05 0 4.0 6.0 8.0 10 2.0 5.0 10 15 20 19.6 19.4 19.2 18.4 18.2 18.0 12.0 11.5 11.0 10.5 10.0 40 20 0 20 140 10 100 35 30 25 20 15 10 5.0 0 0.20 0.15 0.35 19.0 18.8 18.6 19.8 40 60 80 100 120 6.0 5.0 4.0 9.0 8.0 t a = 25 c v cc = 20 v t a = 25 c v cc = 20 v v cc start v cc dis t a = 25 c t a = 25 c v cc = 20 v c load = 15 nf c load = 10 nf c load = 1.0 nf , high state output voltage (v) v oh
MC33154 8 motorola analog ic device data operating description gate drive controlling switching times the most important design aspect of an igbt gate drive is optimization of the switching characteristics. switching characteristics are especially important in motor control applications in which pwm transistors are used in a bridge configuration. in these applications, the gate drive circuit components should be selected to optimize turnon, turnoff, and offstate impedance. a single resistor may be used to control both turnon and turnoff and shown in figure 26. however, the resistor value selected must be a compromise in turnon abruptness and turnoff losses. using a single resistor is normally suitable only for very low frequency pwm. figure 26. using a single gate resistor output v cc v ee 5 kelvin gnd 2 r g igbt an optimized gate drive output stage is shown in figure 27. this circuit allows turnon and turnoff to be optimized separately. figure 27. using separate resistors for turnon and turnoff output v cc v ee 5 kelvin gnd 2 r on igbt r off d off the turnon resistor r on provides control over the igbt turnon speed. in motor control circuits, the resistor sets the turnon di/dt that controls how fast the freewheel diode is cleared. the interaction of the igbt and freewheeling diode determines the turnon dv/dt. excessive turnon dv/dt is a common problem in halfbridge circuits. the turnoff resistor r off controls the turnoff speed and ensures that the igbt remains off under commutation stresses. turnoff is critical to obtain low switching losses. while igbts exhibit a fixed minimum loss due to minority carrier recombination, a slow gate drive will dominate the turnoff losses. this is particularly true for fast igbts. it is also possible to turnoff an igbt too fast. excessive turnoff speed will result in large overshoot voltages. normally the turnoff resistor is a small fraction of the turnon resistor. the MC33154 has a bipolar totem pole output. the output stage is capable of sourcing 4.0 amps and sinking 2.0 amps peak. the output stage also contains a pull down resistor to ensure that the igbt is off when the gate drive power is not applied. in a pwm inverter, igbts are used in a halfbridge configuration. thus, at least one device is always off. while the igbt is in the offstate it will be subjected to changes in voltage caused by the other devices. this is particularly a problem when the opposite transistor turns on. when the lower device is turned on clearing the upper diode, the turnon dv/dt of the lower device appears across the collector emitter of the upper device. to eliminate shootthrough currents it is necessary to provide a low sink impedance to the device in the offstate. fortunately, the turnoff resistor can be made small enough to hold off the device under commutation without causing excessively fast turnoff speeds. sometimes a negative bias voltage is used in the offstate. this is a practice carried over from bipolar darlington drives. a negative bias is generally not required for igbts. however, a negative bias will reduce the possibility of shootthrough. the MC33154 has separate pins for v ee and kelvin gnd. this permits operation using a +15/5 volt supply. interfacing with optoisolators isolated input the MC33154 may be used with an optically isolated input. the optoisolator can be used to provide level shifting and if desired, isolation from ac line voltages. an optoisolator with a very high dv/dt capability should be used, such as the hewlettpackard hcpl0453. the igbt gate turnon resistor should be set large enough to ensure that the opto's dv/dt capability is not exceeded. like most optoisolators, the hcpl0453 has an active low opencollector output. thus, when the led is on, the output will be low. the MC33154 has a noninverting input pin to interface directly with an optoisolator using a pull up resistor. optoisolator output fault the MC33154 has an active high fault output. the fault output may be easily interfaced to an optoisolator. while it is important that all faults are properly reported, it is equally important that no false signals are propagated. again a high dv/dt optoisolator should be used. the led drive provides a resistor programmable current of 10 to 20 ma when on and provides a low impedance path when off.
MC33154 9 motorola analog ic device data an active high output, resistor, and small signal diode provide an excellent led driver. this circuit is shown in figure 28. figure 28. output fault optoisolator short circuit latch output 7 v ee v cc v ee q under voltage lock out it is desirable to protect an igbt from insufficient gate voltage. igbts require 15 v on the gate to guarantee device saturation. at gate voltages below 13 v, the aono state voltage increases dramatically, especially at higher currents. at very lower gate voltages, below 10 v, the igbt may operate in the linear region and quickly overheat. many pwm motor drives use a bootstrap supply for the upper gate drive. the uvlo provides protection for the igbt in case the bootstrap capacitor discharges. the MC33154 will typically start up at about 12 v. the uvlo circuit has about 1.0 volt of hysteresis. the uvlo will disable the output if the supply voltage falls below about 11 v. protection circuitry desaturation protection bipolar power circuits have commonly used what is known as adesaturation detectiono. this involves monitoring the collector voltage and turning off the device if the collector voltage rises above a certain limit. a bipolar transistor will only conduct a certain amount of current for a given base drive. when the base is overdriven the device is in saturation. when the collector current rises above the knee, the device pulls out of saturation. the maximum current the device will conduct in the linear region is a function of the base current and hfe of the transistor. the output characteristics of an igbt are similar to a bipolar device. however the output current is a function of gate voltage, not current. the maximum current depends on the gate voltage and the device. igbts tend to have a very high transconductance and a much higher current density under a short circuit than a bipolar device. motor control igbts are designed for a lower current density under shorted conditions and a longer short circuit survival time. the best method for detecting desaturation is the use of a high voltage clamp diode and a comparator. the MC33154 has a desaturation comparator which senses the collector voltage and provides an output indicating when the device is not full saturated. diode d1 is an external high voltage diode with a rated voltage comparable to the power device. when the igbt is on and saturated, diode d1 will pull down the voltage on the desaturation input. when the igbt is off or pulls out of saturation, the current source will pull up the voltage on the desaturation input. the voltage reference is set to about 6.5 v. this will allow a maximum onvoltage of about 5.0 v. figure 29. desaturation detection using a diode v cc v ee v cc 8 1.0 ma 6.5 v desaturation comparator kelvin gnd d1 kelvin gnd a fault exists when the gate input is high and v ce of the igbt is greater than the maximum allowable v ce(sat) .the output of the desaturation comparator is anded with the gate input signal and fed into the short circuit (sc) latch. the sc latch will turnoff the igbt for the remainder of the cycle when a fault is detected. when the input is toggled low, the latch will reset. the reference voltage is tied to the kelvin ground instead of the v ee to make the threshold independent of negative gate bias. the MC33154 also features a programmable turnon blanking time. during turnon the igbt must clear the opposing free wheeling diode. the collector voltage will remain high until the diode is cleared. once the diode has been cleared the voltage will come down quickly to the v ce(sat) of the device. following turnon there is normally considerable ringing on the collector due to the c oss of the igbts and the parasitic wiring inductance. the error signal from the desaturation signal must be blanked out sufficiently to allow the diode to be cleared and the ringing to settle out. the blanking function uses an npn transistor to clamp the comparator input when the gate input is low. when the input is switched high, the clamp transistor will turnoff, and the current source will charge up the blanking capacitor. the time required for blanking capacitor to charge up from the onvoltage of the clamp fet to the trip voltage of the comparator is the blanking time. if a short circuit occurs after the igbt is turned on and saturated, the delay time will be the time required for the current source to charge up the blanking capacitor from the v ce(sat) to the trip voltage of the comparator. sense igbt protection another approach to protecting the igbts is to sense the emitter current using a current shunt or sense igbts. this method has the advantage of being able to use high gain igbts which do not have any inherent short circuit capability. current sense igbts work as well as current sense mosfets in most circumstances. however, the basic problem of working with very low sense voltages still exists. sense igbts sense current through the channel and are therefore linear concerning collector current. because igbts have a very low incremental onresistance, sense igbts behave much like lowon resistance current sense mosfets. the output voltage of a
MC33154 10 motorola analog ic device data properly terminated sense igbt is very low, normally less than 100 mv. the sense igbt approach requires a blanking time to prevent false tripping during turnon. the sense igbt also requires that the sense signal is ignored while the gate is low. this is because the mirror normally produces large transient voltages during both turnon and turnoff due to the collector to mirror capacitance. a low resistance current shunt may also be used to sense the emitter current. a very low resistance shunt (5.0 m w to 50 m w ) must be used with high current igbts. the output voltage of a current shunt is also very low. when the output is an actual short circuit the inductance will be very low. since the blanking circuit provides a fixed minimum ontime the peak current under a short circuit may be very high. a short circuit discern function may be implemented using a second comparator with a higher trip voltage. this circuit can distinguish between an overcurrent and a shorted output condition. under an actual short circuit the die temperature may get very hot. when a short circuit is detected the transistor should be turnedoff for several milliseconds to cool down before the device is turned back on. the sense circuit is very similar to the desaturation circuit. the MC33154 uses a combination circuit that provides protection for both short circuit capable igbts and sense igbts. application examples the simplest gate drive circuit using the MC33154 is shown in figure 30. the optoisolator requires a pull up resistor. this resistor value should be set to bias the output transistor at the desired current. a decoupling capacitor should be placed close to the ic to minimize switching noise. a bootstrap diode may be used to for a floating supply. if the protection features are not used, then both the desaturation input and the current sense input should be grounded. when used with a single supply the kelvin gnd and v ee pins should be connected. separate resistors are recommended for turnon and turnoff. figure 30. basic application 7 4 3 2 1 5 8 6 fault input desat/ blank output sense gnd v ee v cc MC33154 18 v when used with a dual supply as shown in figure 31, the gnd pin should be kelvin connected to the emitter of the igbt. if the protection features are not used, then both the desaturation input and the current sense input should be connected to gnd. the input optoisolator, however, should be referenced to v ee . figure 31. dual supply application 7 4 3 2 1 5 8 6 fault input desat/ blank output sense gnd v ee v cc MC33154 15 v 5.0 v if desaturation protection is desired as shown in figure 32, a high voltage diode is connected to the desaturation/blanking pin. the blanking capacitor should be connected from the desaturation pin to the v ee pin. if a dual supply is used the blanking capacitor should be connected to the kelvin gnd. because desaturation protection is used in this example, the sense input should be tied high. the MC33154 design ands the output of the overcurrent comparators with the output of the desaturation comparator, allowing the circuit designer to choose either type of protection. although the reverse voltage on collector of the igbt is clamped to the emitter by the free wheeling diode, there is normally considerable inductance within the package itself. a small resistor in series with the diode may be used to protect the ic from reverse voltage transients. figure 32. desaturation application 7 4 3 2 1 5 8 6 fault input desat/ blank output sense gnd v ee v cc MC33154 18 v when using sense igbts or a sense resistor, as shown in figure 33, the sense voltage is applied to the current sense input. the sense trip voltages are referenced to the kelvin gnd pin. the sense voltage is very small, typically about 65 mv, and sensitive to noise. therefore, the sense and ground return conductors should be routed as a differential pair. an rc filter is useful in filtering any high frequency noise. a blanking capacitor is connected
MC33154 11 motorola analog ic device data from the blanking pin to v ee . the stray capacitance on the blanking pin provides a very small level of blanking if left open. the blanking pin should not be grounded when using current sensing. that would disable the overcurrent sense. the blanking pin should never be tied high. that would short out the internal ic clamp transistor. figure 33. sense igbt application 7 4 3 2 1 5 8 6 fault input desat/ blank output sense gnd v ee v cc MC33154 18 v motorola reserves the right to make changes without further notice to any products herein. motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. atypicalo parameters which may be provided in motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. motorola does not convey any license under its patent rights nor the rights of others. motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the motorola product could create a situation where personal injury or death may occur. should buyer purchase or use motorola products for any such unintended or unauthorized application, buyer shall indemnify and hold motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that motorola was negligent regarding the design or manufacture of the part. motorola and are registered trademarks of motorola, inc. motorola, inc. is an equal opportunity/affirmative action employer.
MC33154 12 motorola analog ic device data d suffix plastic package case 75105 issue s p suffix plastic package case 62605 issue k outline dimensions notes: 1. dimension l to center of lead when formed parallel. 2. package contour optional (round or square corners). 3. dimensioning and tolerancing per ansi y14.5m, 1982. style 1: pin 1. ac in 2. dc + in 3. dc in 4. ac in 5. ground 6. output 7. auxiliary 8. v cc 14 5 8 f note 2 a b t seating plane h j g d k n c l m m a m 0.13 (0.005) b m t dim min max min max inches millimeters a 9.40 10.16 0.370 0.400 b 6.10 6.60 0.240 0.260 c 3.94 4.45 0.155 0.175 d 0.38 0.51 0.015 0.020 f 1.02 1.78 0.040 0.070 g 2.54 bsc 0.100 bsc h 0.76 1.27 0.030 0.050 j 0.20 0.30 0.008 0.012 k 2.92 3.43 0.115 0.135 l 7.62 bsc 0.300 bsc m 10 10 n 0.76 1.01 0.030 0.040 seating plane 1 4 5 8 a 0.25 m cb ss 0.25 m b m h c x 45 l dim min max millimeters a 1.35 1.75 a1 0.10 0.25 b 0.35 0.49 c 0.18 0.25 d 4.80 5.00 e 1.27 bsc e 3.80 4.00 h 5.80 6.20 h 0 7 l 0.40 1.25 0.25 0.50 notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. dimensions are in millimeters. 3. dimension d and e do not include mold protrusion. 4. maximum mold protrusion 0.15 per side. 5. dimension b does not include mold protrusion. allowable dambar protrusion shall be 0.127 total in excess of the b dimension at maximum material condition. d e h a b e b a1 c a 0.10 mfax is a trademark of motorola, inc. how to reach us: usa / europe / locations not listed : motorola literature distribution; japan : nippon motorola ltd.: spd, strategic planning office, 141, p.o. box 5405, denver, colorado 80217. 13036752140 or 18004412447 4321 nishigotanda, shagawaku, tokyo, japan. 0354878488 customer focus center: 18005216274 mfax ? : rmfax0@email.sps.mot.com touchtone 1 6022446609 asia / pacific : motorola semiconductors h.k. ltd.; 8b tai ping industrial park, motorola fax back system us & canada only 18007741848 51 ting kok road, tai po, n.t., hong kong. 85226629298 http://sps.motorola.com/mfax/ home page : http://motorola.com/sps/ MC33154/d ?

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